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0G4ARP00 D1768 DTC14 128VLK 12864 24S15 TTY5003 104M1
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 SEMiX 352GB128D
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R) 2 SPT IGBT Modules
SEMiX 352GB128D Module Preliminary Data Inverse Diode
Features
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GB
1
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 352GB128D
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMiX(R) 2 SPT IGBT Modules
Module SEMiX 352GB128D
Preliminary Data
Features
Temperature sensor
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
2
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 352GB128D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 352GB128D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
20-04-2007 SCH
(c) by SEMIKRON
SEMiX 352GB128D
5
20-04-2007 SCH
(c) by SEMIKRON


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